一种GaAs IPD 的宽阻带低通滤波器设计
Design of a GaAs IPD Wide Band Low Pass Filter
  
DOI:
中文关键词:  砷化镓,宽阻带,传输零点,低通滤波器,集成无源器件
英文关键词:gallium arsenide (GaAs), wide band, transmission zero point, low-pass filter, integrated passive device
基金项目:国家自然科学基金(61564005,61864004)
作者单位
易 康1邢孟江1侯 明1李小珍2代传相1 1. 昆明理工大学 信息工程与自动化学院,昆明 650500
 2. 昆明学院 信息技术学院,昆明 650500 
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中文摘要:
      针对传统低通滤波器尺寸小、阻带范围小的问题,在砷化镓(GaAs)衬底上采用集成无源器件(IPD)工艺设计了一款宽阻带低通滤波器。在切比雪夫型低通滤波器电路上引入两传输零点以提高滚降度,在HFSS 中对该电路结构进行建模与仿真,并进行实物加工与测试。测试结果表明:所设计的滤波器截止频率为11.1 GHz,在15~30 GHz范围内的阻带衰减量大于30dB,整体尺寸仅为800μm×650μm×111. 96μm。
英文摘要:
      A wide band low-pass filter is designed using an integrated passive device (IPD) process on a gallium arsenide (GaAs) substrate to solve the problems such as the small size and the small rejection band range of conventional low-pass filters. The circuit structure is modeled and simulated in HFSS by introducing two transmission zeros on the Chebyshev-type low-pass filter circuit to improve the roll-off degree, and the structure is physically processed and tested. The test results show that the designed filter has a cutoff frequency of 11. 1GHz, its rejection band attenuation is greater than 30 dB within 15-30 GHz, and its overall size is only 800μm×650μm×111. 96μm.
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