GaN 开关类功率放大器温度特性的研究
Study of the Temperature Character for the GaN Switch Mode Power Amplifier
  
DOI:
中文关键词:  功率放大器, GaN HEMT, 功率附加效率, 温度特性
英文关键词:power amplifier(PA), GaN high electron mobility transistor (HEMT), power added efficiency (PAE), temperature character
基金项目:青海省2017 年基础研究计划项目(2017-ZJ-753);教育部“春晖计划冶项目(Z2016071)
作者单位
林倩, 贾国庆 青海民族大学物理与电子信息工程学院,西宁810007 
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中文摘要:
      为了研究GaN 开关类功率放大器(PA)的温度特性,通过开展一系列的温度测试来研究温度变化对 该GaN PA 各个性能参数的具体影响。测试结果表明:首先,较高的温度(>80℃)会使GaN HEMT 的电特性发生严重恶化,进而导致器件的性能和可靠性显著下降。其次,对于该开关类GaN PA 来说,随着温度的持续升高,其功率附加效率(PAE)显著降低,不能再保持高效率。而且,随着温度的突变和冲击次数的增加,电路出现显著的退化甚至失效。这些都说明了温度的变化对PA 的性能产生了很大的影响,开关类PA 对温度的变化非常敏感,而且温度冲击对其性能影响更为显著。这些研究为PA 的可靠性设计提供了重要指导。
英文摘要:
      In order to study the temperature character of the GaN switch mode PA, a series of temperature test have been carried out to study the specific impact caused by temperature on various performance parameters of the GaN PA. It can be observed that firstly high temperature ( >80℃) can cause serious electrical characteristics deterioration of the GaN HEMT, even resulting in some significant degradation in the performance and reliability for the transistor. Secondly, for this switch mode GaN PA, its PAE declined significantly with the rise of temperature and can not maintain no longer. Further more, with the temperature mutations and increase of shock times, significant degradation or failure has occurred. It can be concluded that temperature variation has great effect on the PA performance. Moreover, the switch mode PA is very sensitive to the temperature variation, and the thermal shock has more significant influence on the performance of the PA. All these can provide some valuable guidance for PA reliability design.
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